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 2N2907AQ-LCC20
MECHANICAL DATA Dimensions in mm (inches)
5 .0 8 (.2 0 0 ) 1 .2 7 (.0 5 0 ) REF 1 .2 7 (.0 5 0 ) REF P IN 1 IN D E X
1
SURFACE MOUNT QUAD PNP TRANSISTOR
FEATURES
* FOUR INDEPENDENT TRANSISTORS IN A 0.35 INCH SQUARE CERAMIC PACKAGE
1 .9 1 (.0 7 5 ) 1 .6 0 (.0 6 3 )
5 .0 8 (.2 0 0 ) 1 .9 1 (.0 7 5 )
0 .6 4 (.0 2 5 ) REF 2 .1 6 (.0 8 5 )
* SURFACE MOUNTABLE * HERMETICALLY SEALED PACKAGE * SCREENING OPTIONS AVAILABLE
18
14 13
20 1 9 4 8
DESCRIPTION
The 2N2907AQ-LCC20 is a 20 pad, hermetically sealed, Ceramic Surface Mount Transistor array, consisting of four 2N2907A silicon PNP transistor die.
Pin 11 = n/c Pin 16 = n/c
8 .8 9 (.3 5 0 ) SQ
PACKAGE LCC20
Pin 1 = n/c Pin 2 = Collector1 Pin 3 = n/c Pin 4 = Base 1 Pin 5 = Emitter 1 Pin 6 = n/c Pin 7 = Emitter 2 Pin 8 = Base 2 Pin 9 = n/c Pin12 =Collector 3 Pin 17 = Emitter 4 Pin13 = n/c Pin 14 = Base 3 Pin 18 = Base 4 Pin 19 = n/c Pin 20 =Collector 4
Pin10 =Collector 2 Pin 15 = Emitter 3
ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated)
VCBO VCEO VEBO IC IV PD PD TJ , TSTG Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Isolation Voltage Total Device Dissipation @ TA = 25C (four devices driven equally) Total Device Dissipation@ TS(1) = 25C (four devices driven equally) Operating and Storage Junction Temperature Range Soldering Temperature (vapor phase reflow for 30 sec) Soldering Temperaure (heated collect for 5 sec) 60V 60V 5V 600mA 500VDC 1W 2W(2) -65 to +200C 215C 260C
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.6/99
2N2907AQ-LCC20
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated)
Parameter
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector - Base Cut-off Current Emitter Base Cut-off Current ON CHARACTERISTICS VCE(sat) VBE(sat) Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage IC = 150mA IC = 500mA IC = 150mA IC = 500mA IC = 0.1mA IC = 1mA hFE Forwared Current Transfer Ratio IC = 10mA IB = 15mA(3) IB = 50mA(3) IB = 15mA(3) IC = 50mA(3) VCE = 10V VCE = 10V VCE = 10V 75 100 100 100 50 50 300 -- 450 0.4 1.60 1.3 2.6 V V
Test Conditions
IC = 10mA IC = 10mA IE = 10mA IE = 0 IC = 0 IB = 0 IE = 0 IC = 0 VCB = 50V TA = 150C VEB = 3.5V
Min.
60 60 5
Typ.
Max. Unit
V
V V 10 10 50 nA
mA
nA
IC = 150mA(3) VCE = 10V IC = 500mA(3) VCE = 10V IC = 10mA SMALL SIGNAL CHARACTERISTICS hfe lhfel Cibo ton toff Forward Current Transfer Ratio Forward Curent Transfer Ratio Input Capacitance(output open) Turn-On Time Turn-Off Time IC = 1mA VCE = 10V f = 1kHz VCE = 10V TA = -55C
100 2 8 30 45 300
-- pF --
IC = 50mA VCE = 20V f = 100MHz VEB = 2V 100kHz f 1MHz IB1 = 15mA IB1 = IB1=15mA
Cobo Open Circuit Output Capacitance VCB = 10V 100kHz f 1MHz SWITCHING CHARACTERISTICS VCC = 30V IC 150mA VCC = 30V IC 150mA
ns
NOTES:
1) Ts = Substrate Temperatue that the chip carrier is mounted on. 2) Derate Linearly 11.4mW/C above 25C. This rating is proveded as an aid to designers. It is dependent upon mounting material and methods and is not measureable as an outgoing test. 3) Pulse Test Pulse Wide 300ms , Duty Cycle
2%
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.6/99


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